Lasing emission of electrically pumped InGaAs/InGaAsP/InP microcylinder laser

被引：0
|
作者：
Suo, H [1 ]
Qin, L [1 ]
Ning, YQ [1 ]
Pan, YZ [1 ]
Liu, Y [1 ]
Wang, LJ [1 ]
机构：
[1] Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
来源：
SEMICONDUCTOR OPTOELECTRONIC DEVICE MANUFACTURING AND APPLICATIONS | 2001年 / 4602卷
关键词：
microcvity laser; electriclly pumped;
D O I：
10.1117/12.445710
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work InGaAs/InGaAsP/InP microcylinder lasers with diameter of 10 mum were fabricated by wet chemical etching. At liquid nitrogen temperature the lasers show lasing at 1.55 mum when electrically pumped with pulse width 300 ns and cycle of 200 mus. The threshold current is about 3 mA.
引用
收藏
页码：99 / 101
页数：3
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