Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

被引：0
|
作者：
Wang, Da-Wei [1 ]
Yin, Wen-Yan [1 ]
Chen, Wenchao [2 ]
Zhao, Wen-Sheng [3 ]
机构：
[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Innovat Inst Electromagnet Informat & Elect Integ, Key Lab Adv Micro Nano Elect Devices & Smart Syst, Hangzhou, Peoples R China
[2] Zhejiang Univ, Coll Informat Sci & Elect Engn, Innovat Inst Electromagnet Informat & Elect Integ, ZJU UIUC Inst, Int Campus, Hangzhou, Peoples R China
[3] Hanzhou Dianzi Univ, Sch Elect & Informat, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou, Peoples R China
来源：
PROCEEDINGS OF THE 2019 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA) | 2019年
基金：
中国国家自然科学基金;
关键词：
Electrothermal model; parallel simulation; resistive-switching random access memory (RRAM); thermal cross talk;
D O I：
10.1109/iceaa.2019.8879377
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition method and J parallel adaptive unstructured mesh applications infrastructure is adopted. The performances, including accuracy and scalability of the in-house developed parallel simulator are accessed first. And then, the electrothermal characteristics of large-scale RRAM array are investigated using the simulator.
引用
收藏
页码：349 / 352
页数：4
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