Fully coupled electrothermal simulation of resistive random access memory (RRAM) array

被引：0

作者：

Da-Wei WANG ^{[1
]}

Wen-Sheng ZHAO ^{[2
]}

Wenchao CHEN ^{[1
,3
]}

Hao XIE ^{[1
]}

Wen-Yan YIN ^{[1
]}

机构：

[1] College of Information Science & Electronic Engineering,Zhejiang University

[2] School of Electronics and Information,Hangzhou Dianzi University

[3] ZJU-UIUC Institute,International Campus,Zhejiang University

来源：

Science China(Information Sciences) | 2020年 / 63卷 / 08期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

081201 ;

摘要：

Dear editor,Resistive random access memory (RRAM) is a promising candidate for next generation memory technology [1] and the rapid progress in the threedimensional (3D) integration technology facilitates the design of highly integrated and miniaturized RRAM devices [2]. However, the ever-growing storage density does lead to thermal crosstalk a

引用

页码：269 / 271

页数：3

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