InP-based 1.55 μm waveguide-integrated photodetectors for high-speed applications

被引：1
|
作者：
Beling, A. [1 ]
机构：
[1] Fraunhofer Inst Telecommun, Heinrich Hertz Inst, D-10587 Berlin, Germany
来源：
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES X | 2006年 / 6123卷
关键词：
InP; Integrated opto-electronic circuit; pin photodiode; traveling wave photodetector;
D O I：
10.1117/12.644606
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The paper reviews key characteristics of ultra fast evanescently coupled waveguide-integrated p-i-n photodetectors for 1.55 mu m wavelength. In detail, a highly efficient 100 GHz photodetector module and a low-capacitance miniaturized photodiode with 120 GHz bandwidth employing an optical matching layer for enhanced responsivity are reported. Furthermore, recent results on monolithically integrated traveling wave photodetectors based on discrete miniaturized photodiodes with parallel optical feed are presented.
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页数：12
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