Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET

被引：1
|
作者：
Morris, H [1 ]
Cumberbatch, E
Tyree, V
Abebe, H
机构：
[1] San Jose State Univ, Dept Math, San Jose, CA 95192 USA
[2] Claremont Grad Sch, Dept Math, Claremont, CA 91711 USA
[3] Univ So Calif, Inst Informat Sci, MOSIS, Marina Del Rey, CA 90292 USA
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2005年 / 152卷 / 06期
关键词：
D O I：
10.1049/ip-cds:20050018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward. A detailed comparison with test data is presented and the model is shown to be effective over a range of device geometries for a half micrometre technology and voltages up to and including the kink attributable to impact ionisation.
引用
收藏
页码：630 / 632
页数：3
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