Structural, electrical and optical properties of ZnO thin films deposited by sol-gel method

被引:108
|
作者
Sahal, M. [1 ,2 ]
Hartiti, B. [2 ]
Ridah, A. [2 ]
Mollar, M. [1 ]
Mari, B. [1 ]
机构
[1] Univ Politecn Valencia, Dept Fis Aplicada, ETSED, Grp Optoelect & Semicond, Valencia 46022, Spain
[2] Univ Hassan 2, FSTM, Lab LPMAER, Mohammadia 20800, Morocco
关键词
Thin films; Al-doped ZnO; Sol-gel; Spin coating;
D O I
10.1016/j.mejo.2008.06.085
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin films of intrinsic and Al-doped ZnO were prepared by the sol-gel technique associated with spin coating onto glass substrates. Zinc acetate dehydrate, ethanol and monoethanolamine were used as a starting material, solvent and stabiliser, respectively. Structural, electrical and optical characterizations of the films have been carried out. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction <0 0 2>. The four-points technique was used to characterize thin films electrically. All films exhibit a transmittance above 80-90% along the visible range up to 650nm and a sharp absorption onset about 375nm corresponding to the fundamental absorption edge 3.3eV. Intense UV photoluminescence is observed for undoped and 1% Al-doped ZnO films. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1425 / 1428
页数:4
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