Infrared Protection System for High-Voltage Testing of SiC and GaN FETs used in DC-DC Converters

被引：0

作者：

Hormot, Filip ^{[1
]}

Bacmaga, Josip ^{[1
]}

Baric, Adrijan ^{[1
]}

机构：

[1] Univ Zagreb, Fac Elect Engn & Comp, Unska 3, Zagreb 10000, Croatia

来源：

2016 39TH INTERNATIONAL CONVENTION ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONICS AND MICROELECTRONICS (MIPRO) | 2016年

关键词：

hazardous DC voltage; high-voltage switch-mode power converter;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This technical paper presents the design and testing of the protection system for evaluation of high-voltage devices and circuits, e.g. SiC and GaN devices or high-voltage switching DC-DC converters. The high-voltage testing area is protected from invading by an array of infrared (IR) emitters and detectors. Whenever an object passes through the IR protected space, a high-voltage DC source is disconnected from its power supply and harmful effects of high DC voltage are avoided. The functionality of the developed system is tested and its characteristic response timings are measured.

引用

页码：72 / 75

页数：4

共 50 条

[1] Evaluation of GaN HEMTs for High-Voltage Stage of Isolated DC-DC Converters
Chub, Andrii
Zdanowski, Mariusz
Blinov, Andrei
Rabkowski, Jacek
[J]. 2016 10TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG), 2016, : 375 - 379
[2] Integrated All-GaN Driver for High-voltage DC-DC Power Converters
Hsia, Chin
Li, Chung-Yi
Lu, Deng-Fong
Chen, Tzu-Yu
[J]. 2023 20TH INTERNATIONAL SOC DESIGN CONFERENCE, ISOCC, 2023, : 175 - 176
[3] Design Considerations for Integrated, High-Voltage DC-DC Converters
Salimath, A.
Gonano, G.
Bonizzoni, E.
Brambilla, D. L.
Botti, E.
Maloberti, F.
[J]. 2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
[4] Control Method of DC-DC Converters for High-Voltage Feeding Systems
Yoshii, Tsurugi
Morimoto, Hiroaki
Ishiyama, Takuma
Yachida, Takayuki
Akashi, Daisuke
[J]. IEEJ Transactions on Industry Applications, 2022, 142 (03) : 222 - 231
[5] An Overview of High-Conversion High-Voltage DC-DC Converters for Electrified Aviation Power Distribution System
Swaminathan, Niraja
Cao, Yue
[J]. IEEE TRANSACTIONS ON TRANSPORTATION ELECTRIFICATION, 2020, 6 (04) : 1740 - 1754
[6] Optimization of the Drive Circuit for Enhancement Mode Power GaN FETs in DC-DC Converters
Xi, Youhao
Chen, Min
Nielson, Kim
Bell, Robert
[J]. 2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2012, : 2467 - 2471
[7] Comparison of deadtime effects on the performance of DC-DC converters with GaN FETs and silicon MOSFETs
Glaser, John S.
Reusch, David
[J]. 2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
[8] DC-DC Converters for Medium and High Voltage Applications
Adam, G. P.
Alsokhiry, F.
Al-Turki, Y.
Ajangnay, M. O.
Amogpai, A. Y.
[J]. 45TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2019), 2019, : 3337 - 3342
[9] High-voltage DC-DC Power Module Development
Narita, Izuru
Fishbune, Rick
Malik, Randhir
Mohr, David
Chandra, Harish
Schaffer, Mark
Fu, Haley
[J]. 2014 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP), 2014, : 193 - 196
[10] High-voltage DC-DC power module development
20142817920200
[J]. (1) International Business Machines Corp., United States; (2) Hewlett-Packard Company, United States; (3) Cisco Systems, Inc., United States; (4) International Electronics Manufacturing Initiative (INEMI), United States, 1600, Components, Packaging, and Manufacturing; Int. Microelectronics and Packaging Society (iMAPS); Technology (IEEE CPMT) Society Japan Chapter; The Japan Institute of Electronics Packaging (JIEP) (IEEE Computer Society):

← 1 2 3 4 5 →