Memory at the leading edge

被引：0
|
作者：
Neale, R
机构：
来源：
ELECTRONIC ENGINEERING | 1999年 / 71卷 / 868期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To set the scene for the Electronic Engineering Product Focus on memory, which on the following pages examines the realities of specialist memory devices for communication (pp35); the manner in which rotating memory is rising to the challenge of solid state (pp41); and the use of DRAM processes for Flash memory (pp49), it is also necessary to look ahead.
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页码：29 / +
页数：3
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