Flat conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction

被引：206
|
作者：
Morkel, M
Weinhardt, L
Lohmüller, B
Heske, C
Umbach, E
Riedl, W
Zweigart, S
Karg, F
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Infineon Technol AG, D-81541 Munich, Germany
[3] Siemens & Shell Solar, D-81739 Munich, Germany
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 27期
关键词：
D O I：
10.1063/1.1428408
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By combining ultraviolet and x-ray photoelectron spectroscopy with inverse photoemission spectroscopy, we find that the conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction is flat (0.0+/-0.2 eV). Furthermore, we observe a valence-band offset of 0.8+/-0.2 eV. The electronic level alignment is dominated by (1) an unusually large surface band gap of the CuInSe2 thin film (1.4 eV), (2) by a reduced surface band gap of the CdS overlayer (2.2 eV) due to intermixing effects, and (3) by a general influence of the intermixing on the chemical state near the interface. (C) 2001 American Institute of Physics.
引用
收藏
页码：4482 / 4484
页数：3
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