Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

被引：18
|
作者：
Shim, Kyu-Hwan
Yang, Ha Yong
Kil, Yeon-Ho
Yang, Hyeon Deok
Yang, Jong-Han
Hong, Woong-Ki
Kang, Sukill
Jeong, Tae Soo
Kim, Taek Sung [1 ]
机构：
[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea
来源：
ELECTRONIC MATERIALS LETTERS | 2012年 / 8卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
nanoscale; etching; plasma; ICP; Ge; CL-2; SURFACE;
D O I：
10.1007/s13391-012-1109-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was similar to 200 mC/cm(2). When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as similar to 1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.
引用
收藏
页码：423 / 428
页数：6
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