Light from germanium tin heterostructures on silicon

被引：4

作者：

Kasper, E. ^{[1
]}

Kittler, M.

Oehme, M. ^{[1
]}

Arguirov, T.

机构：

[1] Univ Stuttgart, Inst Semicond Engn, D-70174 Stuttgart, Germany

来源：

OPTOELECTRONIC INTEGRATED CIRCUITS XV | 2013年 / 8628卷

关键词：

Germanium tin; GeSn; light emitting diode; optical properties; infrared emission; silicon substrate; photonics; electroluminescence; ELECTROLUMINESCENCE; GE;

D O I：

10.1117/12.2006594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GeSn LED's with Sn contents up to 4% exhibit light emission from the direct band transition although GeSn of low Sn contents is an indirect semiconductor.. The emission wavelength is red shifted compared to Ge. The redshift of the direct band transition is confirmed by different optical characterization techniques as photoluminescence, electroluminescence, photodetection and reflectivity. The photon emission energy decreases from 0.81 eV to 0.65 eV for compressively strained GeSn of 0% to 4% Sn content. Growth of GeSn up to 12% Sn is performed for which preliminary characterization results are given.

引用

页数：11

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