Defect stability in phase-field crystal models: Stacking faults and partial dislocations

被引:58
|
作者
Berry, Joel [1 ,3 ]
Provatas, Nikolas [1 ,2 ]
Rottler, Joerg [3 ]
Sinclair, Chad W. [4 ]
机构
[1] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
[2] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
[3] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada
[4] Univ British Columbia, Dept Mat Engn, Vancouver, BC V6T 1Z4, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
DENSITY-FUNCTIONAL THEORY; STATISTICAL-MECHANICS; PEIERLS STRESS; DEFORMATION; METALS;
D O I
10.1103/PhysRevB.86.224112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The primary factors controlling defect stability in phase-field crystal (PFC) models are examined, with illustrative examples involving several existing variations of the model. Guidelines are presented for constructing models with stable defect structures that maintain high numerical efficiency. The general framework combines both long-range elastic fields and basic features of atomic-level core structures, with defect dynamics operable over diffusive time scales. Fundamental elements of the resulting defect physics are characterized for the case of fcc crystals. Stacking faults and split Shockley partial dislocations are stabilized for the first time within the PFC formalism, and various properties of associated defect structures are characterized. These include the dissociation width of perfect edge and screw dislocations, the effect of applied stresses on dissociation, Peierls strains for glide, and dynamic contraction of gliding pairs of partials. Our results in general are shown to compare favorably with continuum elastic theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Explicit temperature coupling in phase-field crystal models of solidification
    Punke, Maik
    Wise, Steven M.
    Voigt, Axel
    Salvalaglio, Marco
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2022, 30 (07)
  • [22] Partial dislocations and stacking faults in 4H-SiC PiN diodes
    M. E. Twigg
    R. E. Stahlbush
    M. Fatemi
    S. D. Arthur
    J. B. Fedison
    J. B. Tucker
    S. Wang
    Journal of Electronic Materials, 2004, 33 : 472 - 476
  • [23] STACKING-FAULTS AND PARTIAL DISLOCATIONS INVOLVED IN STRUCTURE TRANSFORMATIONS OF ZNS CRYSTALS
    STEINBERGER, IT
    KIFLAWI, I
    KALMAN, ZH
    MARDIX, S
    PHILOSOPHICAL MAGAZINE, 1973, 27 (01) : 159 - 175
  • [24] Partial dislocations and stacking faults in 4H-SiC PiN diodes
    Twigg, ME
    Stahlbush, RE
    Fatemi, M
    Arthur, SD
    Fedison, JB
    Tucker, JB
    Wang, S
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : 472 - 476
  • [25] PARTIAL DISLOCATIONS AND STACKING-FAULTS IN LEC IN-DOPED GAAS CRYSTALS
    LESSOFF, H
    TSENG, W
    GORMAN, R
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 441 - 446
  • [26] Revisiting phase diagrams of two-mode phase-field crystal models
    Emdadi, Arezoo
    Zaeem, Mohsen Asle
    Asadi, Ebrahim
    COMPUTATIONAL MATERIALS SCIENCE, 2016, 123 : 139 - 147
  • [27] Complex order parameter phase-field models derived from structural phase-field-crystal models
    Ofori-Opoku, Nana
    Stolle, Jonathan
    Huang, Zhi-Feng
    Provatas, Nikolas
    PHYSICAL REVIEW B, 2013, 88 (10)
  • [28] Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film - a phase-field model
    Hu, SY
    Li, YL
    Chen, LQ
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2542 - 2547
  • [29] Phase-field models with hysteresis
    Krejcí, P
    Sprekels, J
    JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS, 2000, 252 (01) : 198 - 219
  • [30] Bridging the phase-field and phase-field crystal approaches for anisotropic material systems
    J. Kundin
    M.A. Choudhary
    H. Emmerich
    The European Physical Journal Special Topics, 2014, 223 : 363 - 372