Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands

被引：0
|
作者：
Valakh, MY [1 ]
Vostokov, NV
Gusev, SA
Drozdov, YN
Krasil'nik, ZF
Lobanov, DN
Moldavskaya, LD
Novikov, AV
Postnikov, VV
Stepikhova, MV
Usami, N
Shiraki, Y
Yukhymchuk, VA
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod, Russia
[2] Univ Tokyo, Tokyo, Japan
[3] Natl Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 2002年 / 66卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：161 / 164
页数：4
相关论文
共 50 条
  • [31] Shape transitions of self-assembled Ge islands on Si (001)
    Rastelli, A
    Kummer, M
    von Känel, H
    SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 : 161 - 166
  • [32] Lithographic positioning of self-assembled Ge islands on Si(001)
    Kamins, TI
    Williams, RS
    APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1201 - 1203
  • [33] Shape transitions of self-assembled Ge islands on Si(001)
    Rastelli, A
    Kummer, M
    von Känel, H
    CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, 2002, 696 : 151 - 156
  • [34] Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers
    Shaleev, M. V.
    Novikov, A. V.
    Yablonski, A. N.
    Kuznetsov, O. A.
    Drozdov, Yu. N.
    Krasil'nik, Z. F.
    SEMICONDUCTORS, 2007, 41 (02) : 167 - 171
  • [35] Self-aligning of self-assembled Ge islands on Si(001)
    Kamins, TI
    Williams, RS
    Basile, DP
    NANOTECHNOLOGY, 1999, 10 (02) : 117 - 121
  • [36] Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers
    M. V. Shaleev
    A. V. Novikov
    A. N. Yablonskiĭ
    O. A. Kuznetsov
    Yu. N. Drozdov
    Z. F. Krasil’nik
    Semiconductors, 2007, 41 : 167 - 171
  • [37] Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si1-xGex layer.
    Lobanov, DN
    Novikov, AV
    Shaleev, MV
    Drozdov, YN
    Krasilnik, ZF
    Yablonskiy, AN
    2005 2nd IEEE International Conference on Group IV Photonics, 2005, : 63 - 64
  • [38] Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1−xGex layer
    Yu. N. Drozdov
    Z. F. Krasil’nik
    D. N. Lobanov
    A. V. Novikov
    M. V. Shaleev
    A. N. Yablonskiĭ
    Semiconductors, 2006, 40 : 338 - 341
  • [39] Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1-xGex layer
    Drozdov, Yu. N.
    Krasil'nik, Z. F.
    Lobanova, D. N.
    Novikov, A. V.
    Shaleev, M. V.
    Yablonskii, A. N.
    SEMICONDUCTORS, 2006, 40 (03) : 338 - 341
  • [40] Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate
    Magidson, V
    Regelman, DV
    Beserman, R
    Dettmer, K
    APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1044 - 1046
12345