Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System

被引：0
|
作者：
Lu, Lin [1 ]
Li, Xiaogang [1 ]
机构：
[1] Univ Sci & Technol Beijing, Ctr Corros & Protect, Beijing 100083, Peoples R China
来源：
ADVANCED MATERIALS, PTS 1-3 | 2012年 / 415-417卷
关键词：
CuInS2 thin film; solar cell; complexation; Mott-Schottky;
D O I：
10.4028/www.scientific.net/AMR.415-417.1611
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS2 thin film, potassium hydrogen phthalate (C8H5KO4), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS2 thin film was determined by orthogonal experiment method. The effect of C8H5KO4 on the composition and Mott-Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06x 10(19) cm(-3); the addition of C8H5KO4 can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.
引用
收藏
页码：1611 / 1614
页数：4
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