Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System

For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS2 thin film, potassium hydrogen phthalate (C8H5KO4), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS2 thin film was determined by orthogonal experiment method. The effect of C8H5KO4 on the composition and Mott-Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06x 10(19) cm(-3); the addition of C8H5KO4 can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.