100 mm 4HN-SiC Wafers with Zero Micropipe Density

被引：50

作者：

Leonard, R. T. ^{[1
]}

Khlebnikov, Y. ^{[1
]}

Powell, A. R. ^{[1
]}

Basceri, C. ^{[1
]}

Brady, M. F. ^{[1
]}

Khlebnikov, I. ^{[1
]}

Jenny, J. R. ^{[1
]}

Malta, D. P. ^{[1
]}

Paisley, M. J. ^{[1
]}

Tsvetkov, V. F. ^{[1
]}

Zilli, R. ^{[1
]}

Deyneka, E. ^{[1
]}

Hobgood, H. McD. ^{[1
]}

Balakrishna, V. ^{[1
]}

Carter, C. H., Jr. ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

4HN-SiC; silicon carbide; SiC; PVT; seeded sublimation; crystal; substrate; wafer; diameter; micropipe; dislocation; defects; SINGLE-CRYSTAL;

D O I：

10.4028/www.scientific.net/MSF.600-603.7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections were used to confirm the absence of micropipes. Crystal growth studies for 3-inch material with similar processes have 2 demonstrated a 1c screw dislocation median density of 175 cm(-2), compared to typical densities of 2x10(3) to 4x10(3) cm(-2) in current production wafers. These values were obtained through optical scanning analyzer methods and verified by x-ray topography.

引用

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页码：7 / 10

页数：4

共 33 条

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[33] EPITAXIAL-GROWTH OF 3C-SIC FILMS ON 4 INCH DIAM (100)SILICON-WAFERS BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION
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