Radiation-Sensitive Novel Polymeric Resist Materials: Iterative Synthesis and Their EUV Fragmentation Studies

被引：52
|
作者：
Satyanarayana, V. S. V. [1 ]
Kessler, Felipe [2 ]
Singh, Vikram [3 ]
Scheffer, Francine R. [2 ]
Weibel, Daniel E. [2 ]
Ghosh, Subrata [1 ]
Gonsalves, Kenneth E. [1 ,4 ]
机构：
[1] Indian Inst Technol, Sch Basic Sci, Mandi 175001, Himachal Prades, India
[2] Univ Fed Rio Grande do Sul, Inst Quim, BR-91501970 Porto Alegre, RS, Brazil
[3] Indian Inst Technol, Sch Comp & Elect Engn, Mandi 175001, Himachal Prades, India
[4] Univ N Carolina, Charlotte, NC 28223 USA
来源：
ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 06期
关键词：
radiation sensitive resist materials; characterization; EUV degradation; e-beam and EUV lithography; WAVE-GUIDES; PHOTOACID GENERATOR; LITHOGRAPHY; SURFACE; SPECTROSCOPY; POLYSTYRENE; PERFORMANCE; OXIDATION; DESIGN; FILMS;
D O I：
10.1021/am405905p
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Polymerization of (4-(methacryloyloxy)phenyl)dimethylsulfoniumtriflate (MAPDST), as a key monomer containing the radiation sensitive sulfonium functionality, with various other monomers such as methyl methacrylate (MMA), 4-carboxy styrene (STYCOOH), N-vinyl carbazole (NVK) in different molar ratios via free-radical polymerization method is described. This methodology led to the development of a small chemical library of six different radiation sensitive polymers for lithography applications. Fourier transform infrared (FT-IR) and nuclear magnetic resonance (NMR) spectroscopy identified the reaction products as MAPDST homopolymer and MAPDST-MMA, MAPDST-STYCOOH, MAPDST-NVK copolymers. Molecular weights were obtained from gel permeation chromatography and the decomposition temperature (T-d) values were determined using thermogravimetric analysis (TGA). The effect of extreme ultraviolet (EUV) irradiation on a thin poly(MAPDST) film was investigated using monochromatic synchrotron excitation. These new polymeric materials were also exposed to electron-beam lithography (EBL) and extreme ultraviolet lithography (EUVL) to achieve 20-nm line patterns.
引用
收藏
页码：4223 / 4232
页数：10
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