A 65 nm 1.0 V 1.84 ns Silicon-on-Thin-Box (SOTB) Embedded SRAM with 13.72 nW/Mbit Standby Power for Smart IoT

被引：0

作者：

Yabuuchi, Makoto ^{[1
]}

Nii, Koji ^{[1
]}

Tanaka, Shinji ^{[1
]}

Shinozaki, Yoshihiro ^{[2
]}

Yamamoto, Yoshiki ^{[1
]}

Hasegawa, Takumi ^{[1
]}

Shinkawata, Hiroki ^{[1
]}

Kamohara, Shiro ^{[1
]}

机构：

[1] Renesas Elect Corp, Tokyo 1878588, Japan

[2] Nippon Systemware Co Ltd, Tokyo 1508577, Japan

来源：

2017 SYMPOSIUM ON VLSI CIRCUITS | 2017年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 65-nm Silicon-on-Thin-Box (SOTB) embedded SRAM is demonstrated. By using back-bias (BB) control in the sleep mode, 13.72 nW/Mbit ultra-low standby power is observed, which is reduced to 1/1000 compared to the normal standby mode. The measured read access time with forward BB is 1.84 ns at 1.0 V overdrive and 25 degrees C, which is improved by 60% and thus we achieved over 380 MHz operation. Up to 20% active read power reduction is also achieved by using proposed localized adoptive wordline width control.

引用

页码：C220 / C221

页数：2

共 11 条

[1] A 65 nm 1.0 v 1.84 ns Silicon-on-Thin-Box (SOTB) embedded SRAM with 13.72 nW/Mbit standby power for smart IoT
[J]. 1600, Institute of Electrical and Electronics Engineers Inc., United States (00):
[2] A 65 nm 1.0 V 1.84 ns Silicon-on-Thin-Box (SOTB) Embedded SRAM with 13.72 nW/Mbit Standby Power for Smart IoT
Yabuuchi, Makoto
Nii, Koji
Tanaka, Shinji
Shinozaki, Yoshihiro
Yamamoto, Yoshiki
Hasegawa, Takumi
Shinkawata, Hiroki
Kamohara, Shiro
[J]. 2017 SYMPOSIUM ON VLSI TECHNOLOGY, 2017, : C220 - C221
[3] An Implementation of Ultra-Low-Standby Power SRAMs using 65 nm Silicon-on-Thin-Box (SOTB) for Smart IoT
Nii, Koji
[J]. PROCEEDINGS OF 2017 7TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, DESIGN, AND VERIFICATION (ICDV), 2017, : 9 - 9
[4] An Implementation of 2RW Dual-Port SRAM using 65 nm Silicon-on-Thin-Box (SOTB) for Smart IoT
Yamamoto, Yoshiki
Hasegawa, Takumi
Yabuuchi, Makoto
Nii, Koji
Sawada, Yohei
Tanaka, Shinji
Shinozaki, Yoshihiro
Ito, Kyoji
Shinkawata, Hiroki
Kamohara, Shiro
[J]. 2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,
[5] A 1.2-V 90-MHz Bitmap Index Creation Accelerator with 0.27-nW Standby Power on 65-nm Silicon-On-Thin-Box (SOTB) CMOS
Xuan-Thuan Nguyen
Trong-Thuc Hoang
Inoue, Katsumi
Ngoc-Tu Bui
Van-Phuc Hoang
Cong-Kha Pham
[J]. 2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2019,
[6] Ultra-Low-Standby Power 6T Single-port and 8T Dual-port SRAMs on 65 nm Silicon-on-Thin-Box (SOTB) for Smart IoT Applications
Nii, Koji
Yabuuchi, Makoto
Sawada, Yohei
Tanaka, Shinji
Shinozaki, Yoshihiro
Ito, Kyoji
Umemoto, Yukiko
Yamamoto, Yoshiki
Hasegawa, Takumi
Shinkawata, Hiroki
Kamohara, Shiro
[J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 1171 - 1174
[7] Low-power high-performance 32-bit RISC-V microcontroller on 65-nm silicon-on-thin-BOX (SOTB)
Hoang, Trong-Thuc
Duran, Ckristian
Nguyen, Khai-Duy
Dang, Tuan-Kiet
Nhu, Quynh Nguyen Quang
Than, Phuc Hong
Tran, Xuan-Tu
Le, Duc-Hung
Tsukamoto, Akira
Suzaki, Kuniyasu
Pham, Cong-Kha
[J]. IEICE ELECTRONICS EXPRESS, 2020, 17 (20):
[8] Low-power high-performance 32-bit RISC-V microcontroller on 65-nm silicon-on-thin-BOX (SOTB)
University of Electro-Communications , Tokyo
182-8585, Japan
不详
135-0064, Japan
不详
不详
不详
不详
不详
135-0064, Japan
[J]. IEICE Electron. Express, 2020, 20 (1-6): : 1 - 6
[9] A Sub-μW Reversed-Body-Bias 8-bit Processor on 65-nm Silicon-on-Thin-Box (SOTB) for IoT Applications
Sarmiento, Marco
Khai-Duy Nguyen
Duran, Ckristian
Trong-Thuc Hoang
Serrano, Ronaldo
Van-Phuc Hoang
Tran, Xuan-Tu
Ishibashi, Koichiro
Cong-Kha Pham
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 68 (09) : 3182 - 3186
[10] Low-Power Floating-Point Adaptive-CORDIC-Based FFT Twiddle Factor on 65-nm Silicon-on-Thin-BOX (SOTB) With Back-Gate Bias
Trong-Thuc Hoang
Xuan-Thuan Nguyen
Duc-Hung Le
Cong-Kha Pham
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (10) : 1723 - 1727

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