Heterogeneously Integrated Photodiodes on Silicon

被引：6
|
作者：
Beling, Andreas [1 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2015年 / 51卷 / 11期
关键词：
Photodiodes; silicon photonics; heterogeneous integration; TRAVELING-CARRIER PHOTODIODE; WAVE-GUIDE; HIGH-SPEED; HIGH-RESPONSIVITY; PHOTODETECTORS; DETECTOR;
D O I：
10.1109/JQE.2015.2480595
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews progress in the field of heterogeneously integrated photodiodes with a focus on InP-based highspeed high-power modified uni-traveling carrier photodiodes on silicon-on-insulator waveguides. Discrete, balanced, and photodiode arrays are described.
引用
收藏
页数：6
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