InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation

被引：34

作者：

Beling, Andreas ^{[1
]}

Cross, Allen S. ^{[1
]}

Piels, Molly ^{[2
]}

Peters, Jon ^{[2
]}

Zhou, Qiugui ^{[1
]}

Bowers, John E. ^{[2
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, ECE Dept, Charlottesville, VA 22904 USA

[2] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 22期

关键词：

INDEX;

D O I：

10.1364/OE.21.025901

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA.GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz. (C) 2013 Optical Society of America

引用

页码：25901 / 25906

页数：6

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