Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range

被引：6
|
作者：
Syperek, M. [1 ]
Ryczko, K. [1 ]
Dallner, M. [2 ,3 ]
Dyksik, M. [1 ]
Motyka, M. [1 ]
Kamp, M. [2 ,3 ]
Hofling, S. [2 ,3 ,4 ]
Misiewicz, J. [1 ]
Sek, G. [1 ]
机构：
[1] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Expt Phys, Lab Opt Spect Nanostruct, Wybrzeze S Wyspianskiego 27, PL-50370 Wroclaw, Poland
[2] Univ Wurzburg, Tech Phys, D-97074 Wurzburg, Germany
[3] Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
[4] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland
来源：
ACTA PHYSICA POLONICA A | 2016年 / 130卷 / 05期
关键词：
RECOMBINATION DYNAMICS; LASERS;
D O I：
10.12693/APhysPolA.130.1224
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0.80In0.20As0.15Sb0.85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 mu m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3 +/- 0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 +/- 10 ps time constant.
引用
收藏
页码：1224 / 1228
页数：5
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