Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

被引：4

作者：

Naama, S. ^{[1
]}

Hadjersi, T. ^{[1
]}

Nezzal, G. ^{[2
]}

Guerbous, L. ^{[3
]}

机构：

[1] UDTS, Algiers, Algeria

[2] USTHB, LPT, FGMGP, Dept Genie Proc, Bab Ezzouar 16111, Alger, Algeria

[3] CRNA, Algiers, Algeria

来源：

JOURNAL OF NANO RESEARCH | 2013年 / 21卷

关键词：

Nanostructure; silicon nanowires; chemical etching; scanning electron microscopy (SEM); photoluminescence (PL); OXIDIZED POROUS SILICON; LASER-ABLATION; PHOTOLUMINESCENCE; SI; FABRICATION; EMISSION; UNIFORM;

D O I：

10.4028/www.scientific.net/JNanoR.21.109

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

引用

页码：109 / 115

页数：7

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