Analysis of gate tunneling current in MOS structures using quantum mechanical simulation

被引：0

作者：

Ogawa, M ^{[1
]}

Miyoshi, T ^{[1
]}

机构：

[1] Kobe Univ, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report studies of quantum transport in n(+)Si-SiO2-P Si Metal-Oxide-Semiconductor (MOS) structures based upon a non-equilibrium tight-binding Green's function method. As a result, the quasi-bound states at the SiO2-P Si interface are found to be lower than those calculated by the conventional Shrodinger-Poisson analysis, since the wavefunctions in this region are coupled with the Bloch functions in the electrodes. It is also found that the leakage current through the oxide consists of not only the intraband tunneling but also the interband tunneling current.

引用

页码：144 / 147

页数：4

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