Radiation Effects on CMOS Image Sensors With Sub-2 μm Pinned Photodiodes

被引：10
|
作者：
Place, S. [1 ,2 ]
Carrere, J. -P. [1 ]
Allegret, S. [1 ]
Magnan, P. [2 ]
Goiffon, V. [2 ]
Roy, F. [1 ]
机构：
[1] ST Microelect, F-38926 Crolles, France
[2] Univ Toulouse, ISAE, F-31055 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 04期
关键词：
Activation energy; APS; CMOS 4T image sensor; dark current; irradiation; pinned photodiode; temporal noise;
D O I：
10.1109/TNS.2012.2193671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been irradiated with source. Based on dark current and temporal noise analysis, we develop and propose a phenomenological model to explain pixel performance degradation.
引用
收藏
页码：909 / 917
页数：9
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