Effects of ITO Pattern on the Electrical and Optical Characteristics of LEDs

被引：3
|
作者：
Cao, Bin [1 ,2 ]
Zhou, Shengjun [3 ]
Liu, Sheng [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Optoelect Sci & Engn, Wuhan Natl Lab Optoelect, Div MOEMS, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, State Key Lab Digital Mfg Equipment & Technol, Inst Microsyst, Wuhan 430074, Peoples R China
[3] Shanghai Jiao Tong Univ, Sch Mech Engn, State Key Lab Mech Syst & Vibrat, Shanghai 200240, Peoples R China
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 01期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
LIGHT-EMITTING-DIODES; ENHANCEMENT; SURFACE; PERFORMANCE; ELECTRODES; EFFICIENCY; OUTPUT; LAYER;
D O I：
10.1149/2.032301jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied on the effects of patterned indium-tin oxide (ITO) on the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) in detail. In our experiment, LEDs with varied patterned ITO layers are fabricated. The electrical and optical characteristics are analyzed through the diode equation and 3D electro-thermal simulation, the rate equation and Monte-Carlo ray-tracing simulation, respectively. The analysis results indicate that the light output power (LOP) of the LEDs with patterned ITO achieve an enhancement of 12.7% compared to that of the LEDs with planar ITO. Moreover, the series resistance and ideality factor are the minimum when ITO is planar, and will increase with spacing of ITO pattern decreasing due to the degeneration of current spreading and ohmic contact. However, the light extraction efficiency (LEE) is smaller for LEDs with planar ITO and will increase with spacing decreasing, which is due to the increase of probability of photon redirecting and escaping. These analysis results are helpful to understand the effects of ITO pattern on electrical and optical characteristics and therefore to design an optimal pattern structure. (C) 2012 The Electrochemical Society. All rights reserved.
引用
收藏
页码：R24 / R28
页数：5
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