Microscopic interface phonon modes in structures of GaAs quantum dots embedded in AlAs shells

被引:7
|
作者
Ren, SF [1 ]
Qin, G [1 ]
机构
[1] Illinois State Univ, Dept Phys, Normal, IL 61790 USA
基金
美国国家科学基金会;
关键词
nanostructures; semiconductors; crystal structure and symmetry; phonons;
D O I
10.1016/S0038-1098(01)00483-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
By means of a microscopic valence force field model, a series of novel microscopic interface phonon modes are identified in shell quantum dots (SQDs) composed of a GaAs quantum dot of nanoscale embedded in an AlAs shell of a few atomic layers in thickness. In SQDs with such thin shells, the basic principle of the continuum dielectric model and the macroscopic dielectric function are not valid any more. The frequencies of these microscopic interface modes lie inside the gap between the bulk GaAs band and the bulk AlAs band, contrary to the macroscopic interface phonon modes. The average vibrational energies and amplitudes of each atomic shell show peaks at the interface between GaAs and AlAs. These peaks decay fast as their penetrating depths from the interface increase. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:171 / 175
页数:5
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