Efficiency droop in blue InGaN/GaN single-quantum-well light-emitting diodes on the Si substrate

With the simple ABC model, we demonstrated that the internal quantum efficiency (IQE) of InGaN light-emitting diodes (LEDs) at lower temperature must be higher than that at higher temperature without carrier leakage; this is contradicted by the experimental results of blue InGaN/GaN single-quantum-well (SQW) LEDs. Combined with the variations of IQE and dominant wavelength of SQW LEDs with forward current density, we believe that the electrons will overflow from the well easily after filling up in a higher state, and electron leakage is the main factor for efficiency droop.