Wafer Bonding Process Selection

被引：4

作者：

Dragoi, V. ^{[1
]}

Pabo, E. ^{[2
]}

机构：

[1] DI E, EV Grp, Thallner Str 1, A-4782 St Florian Inn, Austria

[2] EV Grp Inc, Tempe, AZ 85284 USA

来源：

SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE | 2010年 / 33卷 / 04期

关键词：

D O I：

10.1149/1.3483542

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Wafer bonding processes offer valuable solutions not only for MEMS devices but more recently for wafer-level 3D interconnects, advanced packaging and LED applications. The increased complexity of the wafer bonding based applications requires very accurate process design. Unfortunately bonding process selection and design is not always well documented or understood and some important details may not be considered, possibly resulting in major issues during product prototyping or even manufacturing. The main topics to be considered for wafer bonding process selection are summarized and explained.

引用

页码：509 / 517

页数：9

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