In-Pixel A/D Converters with 120-dB Dynamic Range Using Event-Driven Correlated Double Sampling for Stacked SOI Image Sensors

被引：0

作者：

Goto, Masahide ^{[1
]}

Honda, Yuki ^{[1
]}

Watabe, Toshihisa ^{[1
]}

Hagiwara, Kei ^{[1
]}

Nanba, Masakazu ^{[1
]}

Iguchi, Yoshinori ^{[1
]}

Saraya, Takuya ^{[2
]}

Kobayashi, Masaharu ^{[2
]}

Higurashi, Eiji ^{[2
]}

Toshiyoshi, Hiroshi ^{[2
]}

Hiramoto, Toshiro ^{[2
]}

机构：

[1] NHK Sci & Technol Res Labs, Tokyo, Japan

[2] Univ Tokyo, Tokyo, Japan

来源：

2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2016年

关键词：

analog-to-digital converters; CMOS image sensors; correlated double sampling; photodiodes; pulse modulation; siliconon-insulator; three-dimensional integrated circuits;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report in-pixel analog-to-digital converters (ADCs) using event-driven correlated double sampling (CDS) for stacked silicon-on-insulator (SOI) image sensors. The pulse-frequency-modulation ADCs enable a pixel-parallel operation that leads to superior imaging performance. We designed a novel CDS for an ADC comprising comparators, capacitors, and timing control logic circuits to generate clocks for in-pixel operation to suppress reset noise. The developed ADC is successfully confirmed to exhibit an excellent linearity in a wide dynamic range of 120 dB and it shows noise reduction effects, indicating the feasibility of high-performance pixel-level imaging for next-generation image sensors.

引用

页数：3