Sensing characteristics of WO3 thin film as NO2 gas sensor

被引：0
|
作者：
He, XL [1 ]
Li, JP [1 ]
Gao, XG [1 ]
机构：
[1] Chinese Acad Sci, Inst Elect, State Key Lab Transducer Technol, Beijing 100080, Peoples R China
来源：
INTERNATIONAL CONFERENCE ON SENSOR TECHNOLOGY (ISTC 2001), PROCEEDINGS | 2001年 / 4414卷
关键词：
gas sensor; tungsten trioxide; nitrogen dioxide;
D O I：
10.1117/12.440189
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The WO3 thin films were prepared by magnetron sputtering method on the 3mmx3mm silicon substrates with Pt interdigitating electrodes and heater. The deposition and the operating temperatures were analyzed to optimize the technological parameters. The sensing properties of these films to NO2 gas were measured. The results indicate that the sensitivities are strongly dependent on the deposition and operating temperatures. The WO3 thin film deposited at 300 degreesC and then annealed in air at 600 degreesC for 4h shows the excellent sensing properties to NO2 gas at the operating temperature of 250 degreesC.
引用
收藏
页码：207 / 209
页数：3
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