Effects of Li doping on the performance of solution processed ZnO thin film transistors

被引：0
|
作者：
Su, Bo-Yuan [1 ]
Chu, Sheng-Yuan [1 ,3 ]
Juang, Yung-Der [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[2] Natl Univ Tainan, Dept Mat Sci, Tainan 700, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
来源：
IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2011年
关键词：
ZINC-OXIDE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, lithium (Li) doping on the performance of solution processed zinc oxide (ZnO) thin film transistors (TFTs). However, the ZnO TFTs showed good electric characteristic of I-on / I-off ratio over 10(5) with reasonable field-effect Mobility of 1.5 cm(2) /V s.
引用
收藏
页码：173 / 176
页数：4
相关论文
共 50 条
  • [31] Investigation on the Doping Dependence of Solution-Processed Zinc Tin Oxide Thin Film and Thin-Film Transistors
    Jung, C. H.
    Lee, J. Y.
    Pu, L. S.
    Yoon, D. H.
    SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY, 2011, 41 (09) : 1153 - 1157
  • [32] Memory effects of all-solution-processed oxide thin-film transistors using ZnO nanoparticles
    Bae, Jung Hyeon
    Kim, Gun Hee
    Jeong, Woong Hee
    Kim, Hyun Jae
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2011, 19 (05) : 404 - 409
  • [33] Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
    Kang, Tae Sung
    Koo, Ja Hyun
    Kim, Tae Yoon
    Hong, Jin Pyo
    APPLIED PHYSICS EXPRESS, 2013, 6 (01)
  • [34] Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors
    Kim, Hyo Jin
    Je, So Yeon
    Won, Ju Yeon
    Baek, Jong Han
    Jeong, Jae Kyeong
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (11): : 924 - 927
  • [35] Performance of top-gate thin film transistors with solution processed ZnO channel layer and PVP gate dielectric
    Nayak, Pradipta K.
    Kim, Jinwoo
    Lee, Changhee
    Hong, Yongtaek
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (07): : 1664 - 1667
  • [36] Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors
    Su, Bo-Yuan
    Chu, Sheng-Yuan
    Juang, Yung-Der
    Liu, Ssu-Yin
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 580 : 10 - 14
  • [37] Stability and spacial trap state distribution of solution processed ZnO-thin film transistors
    Ortel, Marlis
    Pittner, Steve
    Wagner, Veit
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (15)
  • [38] Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors
    Park, Si Yun
    Kim, Sunyoung
    Yoo, Jeeyoung
    Lim, Keon-Hee
    Lee, Eungkyu
    Kim, Kyongjun
    Kim, Joohee
    Kim, Youn Sang
    RSC ADVANCES, 2014, 4 (22): : 11295 - 11299
  • [39] Stability and spacial trap state distribution of solution processed ZnO-thin film transistors
    Wagner, V. (v.wagner@jacobs-university.de), 1600, American Institute of Physics Inc. (113):
  • [40] Schottky Barrier Thin Film Transistors Using Solution-Processed n-ZnO
    Adl, Ahmad H.
    Ma, Alex
    Gupta, Manisha
    Benlamri, Mourad
    Tsui, Ying Y.
    Barlage, Douglas W.
    Shankar, Karthik
    ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (03) : 1423 - 1428
12345