Effects of Li doping on the performance of solution processed ZnO thin film transistors

被引：0
|
作者：
Su, Bo-Yuan [1 ]
Chu, Sheng-Yuan [1 ,3 ]
Juang, Yung-Der [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[2] Natl Univ Tainan, Dept Mat Sci, Tainan 700, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
来源：
IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2011年
关键词：
ZINC-OXIDE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, lithium (Li) doping on the performance of solution processed zinc oxide (ZnO) thin film transistors (TFTs). However, the ZnO TFTs showed good electric characteristic of I-on / I-off ratio over 10(5) with reasonable field-effect Mobility of 1.5 cm(2) /V s.
引用
收藏
页码：173 / 176
页数：4
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