Quantum-dot semiconductor disk lasers

被引：34

作者：

Germann, T. D. ^{[1
]}

Strittmatter, A. ^{[1
]}

Pohl, U. W. ^{[1
]}

Bimberg, D. ^{[1
]}

Rautiainen, J. ^{[2
]}

Guina, M. ^{[2
]}

Okhotnikov, O. G. ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-1000 Berlin, Germany

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

QD; Quantum dot; Submonolayer; SDL; Semiconductor disk laser; VECSEL;

D O I：

10.1016/j.jcrysgro.2008.07.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate quantum-dot (QD)-based, optically pumped semiconductor disk lasers (SDLs) for wavelengths ranging from 950 to 1210 nm. QDs grown either in the submonolayer (SML) or in the Stranski-Krastanow (SK) regime are employed as active layers of the SDLs which are based on two different design concepts. Output power of up to 1.4 W continuous wave (CW) is achieved with an InAs/ GaAs-SML SDL at 1040 nm. Up to 21 InGaAs SK-QD layers within a single SDL gain structure are used to realize the ground-state CW lasing with 0.3 W at 1210 nm. The SK-QD-based SDL shows temperature and pump-power stable emission. Threshold and differential efficiency do not depend on heat-sink temperature. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：5182 / 5186

页数：5

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