Single-electron tunneling in magnetic systems

被引：5
|
作者：
Brataas, A
Nazarov, YV
Inoue, J
Bauer, GEW
机构：
[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
[2] DIMES, NL-2628 CJ Delft, Netherlands
[3] Philips Res Labs, NL-5600 JA Eindhoven, Netherlands
[4] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 46401, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷
关键词：
single-electron tunneling; double barrier structures;
D O I：
10.1016/S0304-8853(98)01042-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We discuss the transport properties of small magnetic double barrier structures in terms of the orthodox theory of single-electron tunneling for non-vanishing spin-relaxation times. The magnetoresistance of the system is enhanced for slow spin-relaxation in the island due to reduced mixing of the spin-channels. The spin accumulation can be detected by the long-time transient response, which is dominated by the spin dynamics. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：176 / 178
页数：3
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