A surface micromachined electrostatically tunable film bulk acoustic resonator

被引：14
|
作者：
Pan, WL
Soussan, P
Nauwelaers, B
Tilmans, HAC
机构：
[1] IMEC, MCP, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, ESAT, INSYS, B-3001 Louvain, Belgium
[3] Katholieke Univ Leuven, ESAT, TELEMIC, B-3001 Louvain, Belgium
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2006年 / 126卷 / 02期
关键词：
FBAR; frequency tuning; electrostatic actuation; integration;
D O I：
10.1016/j.sna.2005.10.055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design, modeling, fabrication and characterization of a film bulk acoustic resonator (FBAR) that allows frequency tuning by MEMS actuation are reported. FBARs are micromachined versions of bulk acoustic wave (BAW) resonators working in the microwave regime. A small range of frequency tuning is desired to cope with drifts from different origins. In conventional approaches, this functionality has been realized by introducing a discrete element. In this paper, a different design is proposed, in which the MEMS tuning element is integrated in the FBAR structure and tuning is realized by electrostatic actuation. A first demonstration of frequency tuning is also presented. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：436 / 446
页数：11
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