Design and verification of a film bulk acoustic resonator

被引：0
|
作者：
Shen H. [1 ,2 ]
Ou W. [2 ,3 ]
机构：
[1] School of Microelectronics, Univ. of Chinese Academy of Sciences, Beijing
[2] Institute of Microelectronics, Chinese Academy of Sciences, Beijing
[3] National Center for Advanced Packaging Co., LTD, Wuxi
来源：
Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2019年 / 46卷 / 04期
关键词：
Aluminum nitride; Induced layers; Thin film bulk acoustic resonator;
D O I：
10.19665/j.issn1001-2400.2019.04.020
中图分类号：
学科分类号：
摘要：
In order to simplify the design of the film thickness of the film bulk acoustic resonator, a design method for film bulk acoustic resonator film thickness is proposed. The simulation structure consists of the induced layer and the upper electrode-piezoelectric-electrode sandwich structure. The initial film of the film bulk acoustic resonator is designed by the optimal effective electromechanical coupling coefficient, and then the thickness of the induced layer and the corresponding frequency offset value are determined. The parallel resonant frequency is compensated with the frequency offset, and then the film thickness of the electrode and the piezoelectric are recalculated. Finally, the structure is simulated by COMSOL. When the parallel resonant frequency is 3.60 GHz, the frequency offset value of the 100 nm AlN is 0.20 GHz. The effective electromechanical coupling coefficient of the AlN is 5.907%. After frequency compensation, the series resonant frequency and parallel resonant frequency of the AlN are 3.48 GHz and 3.60 GHz, respectively. The design method is verified. The induced layer effectively optimizes the C-axis characteristics of the piezoelectric layer and reduces energy loss. © 2019, The Editorial Board of Journal of Xidian University. All right reserved.
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页码：144 / 149
页数：5
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