Research on the Performance of P- i- n Type GaN Ultraviolet Photoelectric Detector

GaN ultraviolet photoelectric detecting technique has important application value in the spacecraft, fire monitoring, ultraviolet communication and other fields. In this paper, p-type GaN samples were obtained after rapid annealing of GaN mixing Mg at 700 similar to 800 degrees C. Then, p-i-n type GaN ultraviolet photoelectric detectors were fabricated on Al2O3 substrates by metal organic chemical vapor phase epitaxial deposition method. The devices have better rectifying behavior which can be demonstrated by the I-V curve. The response time of the device is 1.6 mu s and its higher responsivity is 0.95A/W.