Investigation of structure, magnetic, and transport properties of Mn-doped SiC films

被引：7
|
作者：
Sun, Xianke [1 ,2 ]
Guo, Ruisong [1 ]
An, Yukai [2 ,3 ]
Liu, Jiwen [1 ,2 ,3 ]
机构：
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300172, Peoples R China
[2] Tianjin Univ Technol, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China
[3] Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2013年 / 31卷 / 04期
基金：
美国国家科学基金会;
关键词：
NANOWIRES; PLASMA; FERROMAGNETISM; SEMICONDUCTORS; GRAPHENE; ZNO; FE; NI;
D O I：
10.1116/1.4809586
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Mn-doped SiC films were fabricated by radio frequency magnetron sputtering technique. The structure, composition, and magnetic and transport properties of the films were investigated. The results show the films have the 3C-SiC crystal structure and the doped Mn atoms in the form of Mn2+ ions substitute for C sites in SiC lattice. All the films are ferromagnetic at 300 K, and the ferromagnetism in films arises from the doped Mn atoms and some extended defects. In addition, the saturation magnetization increases with the Mn-doped concentration increasing. The Mn doping does not change the semiconductor characteristics of the SiC films. (C) 2013 American Vacuum Society.
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页数：4
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