Ion-induced formation of regular nanostructures on amorphous GaSb surfaces

被引：86

作者：

Facsko, S

Bobek, T

Kurz, H

Dekorsy, T

Kyrsta, S

Cremer, R

机构：

[1] Rhein Westfal TH Aachen, Lehrstuhl Halbleitertech, D-52056 Aachen, Germany

[2] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52056 Aachen, Germany

[3] Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

[4] Rhein Westfal TH Aachen, Inst Theoret Huttenkunde, D-52056 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.1429750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystalline and amorphous GaSb surfaces are compared concerning their response to sputter erosion with low energy Ar+ ions under normal incidence. We show that the formation of regular nanostructures on GaSb is basically independent of whether the initial material is crystalline or amorphous. The similarity in the temporal and spatial evolution demonstrates that the dynamics of the morphology evolution is entirely controlled by a thin amorphous surface layer. (C) 2002 American Institute of Physics.

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页码：130 / 132

页数：3

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