Field emission properties and synthesis of carbon nanotubes grown by rf plasma-enhanced chemical vapor deposition

被引：7

作者：

Jiang, J ^{[1
]}

Feng, T

Zhang, JH

Cheng, XH

Chao, GB

Jiang, BY

Wang, YJ

Wang, X

Liu, XH

Zou, SC

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 08期

基金：

中国国家自然科学基金;

关键词：

carbon nanotubes; plasma enhanced chemical vapor deposition; growth mechanism; defects;

D O I：

10.1016/j.apsusc.2005.04.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Plasma-enhanced chemical vapor deposition (PECVD) method was employed to grow the Fe-catalyzed carbon nanotubes (CNTs). The grown CNTs with a uniform diameter in the range of about 10-20 nm and the typical lengths beyond 1 mu m resulted in a very high aspect ratio. The Raman and TEM results showed that the grown CNTs contained a large amount of carbonaceous particles and crystal defects, such as Pentagon-heptagon pair defects. XPS measurement indicated that the CNTs had C-H covalent bonds. Field emission characteristics exhibited the low turn-on threshold field of 2.75 V/mu m and the maximum emission current density of 7.75 mA/cm(2) at 6.5 V/mu m. The growth mechanism of CNTs and the effects of hydrogen plasma on their structure were discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：2938 / 2943

页数：6

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