Integrated High Speed Hybrid Silicon Transmitter

被引：1

作者：

Jain, Siddharth R. ^{[1
]}

Tang, Yongbo ^{[1
]}

Srinivasan, Sudharsanan ^{[1
]}

Heck, Martijn J. R. ^{[1
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

来源：

OPTOELECTRONIC INTERCONNECTS XIII | 2013年 / 8630卷

关键词：

Silicon photonics; hybrid silicon photonics; quantum well intermixing; WDM; EAM; segmented electrode; ELECTROABSORPTION MODULATOR; WAVE-GUIDES; INTERDIFFUSION; ELECTRODE; LASERS;

D O I：

10.1117/12.2009454

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review recent progress made on the hybrid silicon platform towards realizing an integrated high speed WDM transmitter on silicon. Using ion implantation enhanced quantum well intermixing, four band gaps are integrated on a single chip and used to demonstrate a DFB laser array operating over 200 nm from 1250 to 1450 nm. Results from an independent effort to improve on hybrid silicon EA modulator performance are also described. Together these demonstrations pave the way to realize a terabit transmitter on silicon.

引用

页数：9

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