Effect of a Phonon Bottleneck on Exciton and Spin Generation in Self-Assembled In1-xGaxAs Quantum Dots

被引：4

作者：

Huang, Y. Q. ^{[1
]}

Buyanova, I. A. ^{[1
]}

Yang, X. J. ^{[3
]}

Murayama, A. ^{[2
]}

Chen, W. M. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo, Hokkaido 0600814, Japan

[3] Suzhou QiangMing Optoelect Co Ltd, Suzhou 215028, Jiangsu, Peoples R China

来源：

PHYSICAL REVIEW APPLIED | 2018年 / 9卷 / 04期

基金：

瑞典研究理事会; 日本学术振兴会;

关键词：

LIGHT-EMITTING-DIODES; ENERGY RELAXATION; OPTICAL PHONONS; POLARIZATION; SCATTERING; MECHANISM;

D O I：

10.1103/PhysRevApplied.9.044037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We provide direct experimental evidence for the effect of a phonon bottleneck on exciton and spin generation in self-assembled In0.5Ga0.5As quantum dots (QDs). With the aid of tunable laser spectroscopy, we resolve and identify efficient exciton generation channels in the QDs mediated by longitudinal-optical (LO) phonons from an otherwise inhomogeneously broadened QD emission background that suffers from the phonon bottleneck effect in exciton generation. Spin-generation efficiency is found to be enhanced under the LO-assisted excitation condition due to suppressed spin relaxation accompanying accelerated exciton generation. These findings underline the importance of fine-tuning QD energy levels that will benefit potential spin-optoelectronic applications of QDs by reducing spin loss due to the phonon bottleneck.

引用

页数：9

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