The aim of this paper is to derive and analyze diffusion models for semiconductor spintronics. We begin by presenting and studying the so called " spinor" Boltzmann equation. Starting then from a rescaled version of linear Boltzmann equation with different spin-flip and non spin-flip collision operators, different continuum (drift-diffusion) models are derived. By comparing the strength of the spin-orbit scattering with the scaled mean free paths, we explain how some models existing in the literature (like the two-component models) can be obtained from the spinor Boltzmann equation. A new spin-vector drift-diffusion model keeping spin relaxation and spin precession effects due to the spin-orbit coupling in semiconductor structures is derived and some of its mathematical properties are checked.
机构:
Chinese Acad Sci, Grad Univ, Coll Phys Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Grad Univ, Coll Phys Sci, Beijing 100049, Peoples R China
Zhang, Li-Zhi
Wang, Zheng-Chuan
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机构:
Chinese Acad Sci, Grad Univ, Coll Phys Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Grad Univ, Coll Phys Sci, Beijing 100049, Peoples R China
Wang, Zheng-Chuan
Su, Gang
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机构:
Chinese Acad Sci, Grad Univ, Coll Phys Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Grad Univ, Coll Phys Sci, Beijing 100049, Peoples R China
机构:
Univ Chinese Acad Sci, Dept Phys, POB 4588, Beijing 100049, Peoples R China
Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, POB 4588, Beijing 100049, Peoples R ChinaUniv Chinese Acad Sci, Dept Phys, POB 4588, Beijing 100049, Peoples R China
机构:
Univ Chinese Acad Sci, Dept Phys, POB 4588, Beijing 100049, Peoples R ChinaUniv Chinese Acad Sci, Dept Phys, POB 4588, Beijing 100049, Peoples R China