Product-level Reliability of GaN Devices

被引:0
|
作者
Bahl, Sandeep R. [1 ]
Ruiz, Daniel [1 ]
Lee, Dong Seup [2 ]
机构
[1] Texas Instruments Inc, 2900 Semicond Dr, Santa Clara, CA 95052 USA
[2] Texas Instruments Inc, 13121 TI Blvd, Dallas, TX 75243 USA
关键词
Gallium nitride; life testing; power conversion; power transistors; semiconductor device reliability;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To enable the widespread adoption of GaN products, the industry needs to be convinced of product-level reliability. The difficulty with product-level reliability lies with the diverse range of products and use conditions, a limited ability for system-level acceleration, and the complication from non-GaN system failures. For power management applications, however, it is possible to identify fundamental switching transitions. This allows the device to be qualified in an application-relevant manner. In this paper, we explain how hard-switching can form a fundamental switching transition for power management products. We further show that the familiar double-pulse tester is a good hard-switching qualification test vehicle. The methodology is explained in the context of the existing qualification framework for silicon transistors.
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页数:6
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