Short SiGe HBT Electro-Absorption Modulator

被引：0
|
作者：
Wu, Pengfei [1 ]
Deng, Shengling [1 ]
Huang, Z. Rena [1 ]
机构：
[1] Rensselaer Polytech Inst, Elect Comp & Syst Engn Dept, Troy, NY 12180 USA
来源：
2012 IEEE PHOTONICS CONFERENCE (IPC) | 2012年
关键词：
Electro-absorption modulator; optical interconnections; SiGe HBT; SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A SiGe HBT electro-absorption modulator with a device length of 69 mu m is proposed. Calculations show that the modulator works at a speed of 25 GHz and can achieve a 10 dB extinction ratio.
引用
收藏
页码：282 / 283
页数：2
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