Advanced mm-wave ICs and applications

被引：0

作者：

Schlechtweg, A. ^{[1
]}

Tessmann, A. ^{[1
]}

Leuther, A. ^{[1
]}

Schwoerer, C. ^{[1
]}

Massler, H. ^{[1
]}

Mikulla, A. ^{[1
]}

Walther, A. ^{[1
]}

Riessle, A. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

2005 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: INTEGRATED CIRCUITS FOR WIDEBAND COMMUNICATION AND WIRELESS SENSOR NETWORKS | 2005年

关键词：

FETs; FET amplifiers; low-noise amplifiers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance integrated circuits and modules for millimeter-wave applications based on metamorphic InAlAs/InGaAs HEMTs on 4" GaAs substrates are presented. An extrinsic transit frequency of 410 GHz for 50 nm gate length devices is achieved. The IC process features high yield on both transistor and circuit levels. Two-stage low-noise amplifiers demonstrate a small signal gain of 20 dB and a noise figure of 2.4 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 21 dB at 220 GHz. High-gain modules featuring low-noise performance arte discussed which enable novel applications, such as millimeter-wave imaging up to 220 GHz.

引用

页码：46 / 49

页数：4

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