Sub-THz zero-bias detector with high performances based on Heterostructure Low Barrier Diode (HLBD)

被引：0

作者：

Nadar, S. ^{[1
]}

Zaknoune, M. ^{[1
]}

Wallart, X. ^{[1
]}

Coinon, C. ^{[1
]}

Peytavit, E. ^{[1
]}

Ducournau, G. ^{[1
]}

Gamand, F. ^{[2
]}

Thirault, M. ^{[2
]}

Werquin, M. ^{[2
]}

Jonniau, S. ^{[2
]}

Thouvenin, N. ^{[2
]}

Gaquiere, C. ^{[1
,2
]}

Vellas, N. ^{[2
]}

Lampin, J. -F. ^{[1
]}

机构：

[1] Lille1 Univ, UMR CNRS 8520, IEMN, Terahertz Photon Grp, Ave Poincare CS 60069, F-59652 Villeneuve Dascq, France

[2] MC2 Technol, Parc Haute Borne,Bat 7,10 Rue Hubble, F-59262 Sainghin En Melantois, France

来源：

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level radiometric detection. We have measured the microwave performances of HLBD from DC to 220 GHz. A responsivity of 1700 V/W for unmatched diodes with a very low differential resistance of 256 Omega has been measured. A noise equivalent power (NEP) of about 1.3 pW/Hz(1/2) was then deduced. These performances make our diode easy to matched with 50 Omega circuits and particularly interesting for low-level sub-THz detection applications.

引用

页数：2

共 23 条

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