Sub-THz zero-bias detector with high performances based on Heterostructure Low Barrier Diode (HLBD)

被引:0
|
作者
Nadar, S. [1 ]
Zaknoune, M. [1 ]
Wallart, X. [1 ]
Coinon, C. [1 ]
Peytavit, E. [1 ]
Ducournau, G. [1 ]
Gamand, F. [2 ]
Thirault, M. [2 ]
Werquin, M. [2 ]
Jonniau, S. [2 ]
Thouvenin, N. [2 ]
Gaquiere, C. [1 ,2 ]
Vellas, N. [2 ]
Lampin, J. -F. [1 ]
机构
[1] Lille1 Univ, UMR CNRS 8520, IEMN, Terahertz Photon Grp, Ave Poincare CS 60069, F-59652 Villeneuve Dascq, France
[2] MC2 Technol, Parc Haute Borne,Bat 7,10 Rue Hubble, F-59262 Sainghin En Melantois, France
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Heterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level radiometric detection. We have measured the microwave performances of HLBD from DC to 220 GHz. A responsivity of 1700 V/W for unmatched diodes with a very low differential resistance of 256 Omega has been measured. A noise equivalent power (NEP) of about 1.3 pW/Hz(1/2) was then deduced. These performances make our diode easy to matched with 50 Omega circuits and particularly interesting for low-level sub-THz detection applications.
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