Highly Conductive p-Type Transparent Conducting Electrode with Sulfur-Doped Copper Iodide

被引:21
|
作者
Ahn, Kyunghan [1 ]
Kim, Ga Hye [1 ]
Kim, Se-Jun [2 ]
Kim, Jihyun [1 ]
Ryu, Gi-Seong [3 ]
Lee, Paul [1 ]
Ryu, Byungki [4 ]
Cho, Jung Young [5 ]
Kim, Yong-Hoon [1 ]
Kang, Joohoon [1 ]
Kim, Hyungjun [2 ]
Noh, Yong-Young [3 ]
Kim, Myung-Gil [1 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[2] Korea Adv Inst Sci & Technol KAIST, Dept Chem, Daejeon 34141, South Korea
[3] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea
[4] Korea Electrotechnol Res Inst KERI, Energy Convers Res Ctr, Elect Mat Res Div, Chang Won 51543, South Korea
[5] Korea Inst Ceram Engn & Technol KICET, Energy & Environm Div, Jinju 52851, South Korea
基金
新加坡国家研究基金会;
关键词
LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; THIN-FILM; SYSTEMS;
D O I
10.1021/acs.chemmater.2c02603
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Although n-type transparent conductors have been commercialized with high optical transmittance and electrical conductivity, the realization of their p-type counterparts has been a challenging problem. Here, we report the synthesis of a highly conductive transparent p-type sulfur-doped CuI (CuI:S) thin film using a liquid-iodination method with a thiol additive. The CuI:S film shows a remarkably high electrical conductivity of 511 S cm-1 with an optical transmittance of greater than 80%. Furthermore, additional hole doping of CuI:S with H2O2 treatment improves the electrical conductivity to 596 S cm-1. Consequently, CuI:S exhibits a record-high figure of merit (FOM) value of 63,000 M C2-1 (73,000 M C2-1 with H2O2 treatment), which is similar to 370% (similar to 430% with H2O2 treatment) higher than the previously reported record high FOM value. The highly conducting CuI:S electrode is successfully applied as transparent conducting electrodes of the organic light-emitting diode and transparent p-type thin-film transistor. The liquid-iodination chemical method with unconventional control of the reaction parameters can be generalized to produce high-quality metal halide thin films, allowing them to be applicable for transparent electronics and optoelectronics.
引用
收藏
页码:10517 / 10527
页数:11
相关论文
共 50 条
  • [1] The role of sulfur in sulfur-doped copper(I) iodide p-type transparent conductors
    Mirza, Adeem Saeed
    Pols, Mike
    Soltanpoor, Wiria
    Tao, Shuxia
    Brocks, Geert
    Morales-Masis, Monica
    MATTER, 2023, 6 (12) : 4306 - 4320
  • [2] ELECTRICAL PROPERTIES OF SULFUR-DOPED TYPE AND P-TYPE GALLIUM ANTIMONIDE
    VUL, AY
    GOLUBEV, LV
    SHMARTSE.YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1059 - &
  • [3] Synthesis of sulfur-doped p-type graphene by annealing with hydrogen sulfide
    Liang, Chen
    Wang, Yuelin
    Li, Tie
    CARBON, 2015, 82 : 506 - 512
  • [4] Electronic structure of amorphous copper iodide: A p-type transparent semiconductor
    Zhang, Zhaofu
    Guo, Yuzheng
    Robertson, John
    PHYSICAL REVIEW MATERIALS, 2020, 4 (05):
  • [5] Dopant Control of Solution-Processed CuI:S for Highly Conductive p-Type Transparent Electrode
    Son, Minki
    Kim, Ga Hye
    Song, Okin
    Park, Chanhu
    Kwon, Sunbum
    Kang, Joohoon
    Ahn, Kyunghan
    Kim, Myung-Gil
    ADVANCED SCIENCE, 2024, 11 (14)
  • [6] P-type multilayer graphene as a highly efficient transparent conducting electrode in silicon heterojunction solar cells
    Patel, Kamlesh
    Tyagi, Pawan K.
    CARBON, 2017, 116 : 744 - 752
  • [7] P-type transparent conducting oxides
    Zhang, Kelvin H. L.
    Xi, Kai
    Blamire, Mark G.
    Egdell, Russell G.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (38)
  • [8] p-type transparent conducting oxides
    Sheng, Su
    Fang, Guojia
    Li, Chun
    Xu, Sheng
    Zhao, Xingzhong
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (08): : 1891 - 1900
  • [9] Copper-alloyed ZnS as a p-type transparent conducting material
    Diamond, Anthony M.
    Corbellini, Luca
    Balasubramaniam, K. R.
    Chen, Shiyou
    Wang, Shuzhi
    Matthews, Tyler S.
    Wang, Lin-Wang
    Ramesh, Ramamoorthy
    Ager, Joel W.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (11): : 2101 - 2107
  • [10] N-TYPE NEGATIVE RESISTANCE AND PHOTOCONDUCTIVITY OF SULFUR-DOPED P-TYPE SI
    LEBEDEV, AA
    SULTANOV, NA
    TUCHKEVI.VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 25 - +