Highly Conductive p-Type Transparent Conducting Electrode with Sulfur-Doped Copper Iodide

被引:21
|
作者
Ahn, Kyunghan [1 ]
Kim, Ga Hye [1 ]
Kim, Se-Jun [2 ]
Kim, Jihyun [1 ]
Ryu, Gi-Seong [3 ]
Lee, Paul [1 ]
Ryu, Byungki [4 ]
Cho, Jung Young [5 ]
Kim, Yong-Hoon [1 ]
Kang, Joohoon [1 ]
Kim, Hyungjun [2 ]
Noh, Yong-Young [3 ]
Kim, Myung-Gil [1 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[2] Korea Adv Inst Sci & Technol KAIST, Dept Chem, Daejeon 34141, South Korea
[3] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea
[4] Korea Electrotechnol Res Inst KERI, Energy Convers Res Ctr, Elect Mat Res Div, Chang Won 51543, South Korea
[5] Korea Inst Ceram Engn & Technol KICET, Energy & Environm Div, Jinju 52851, South Korea
基金
新加坡国家研究基金会;
关键词
LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; THIN-FILM; SYSTEMS;
D O I
10.1021/acs.chemmater.2c02603
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Although n-type transparent conductors have been commercialized with high optical transmittance and electrical conductivity, the realization of their p-type counterparts has been a challenging problem. Here, we report the synthesis of a highly conductive transparent p-type sulfur-doped CuI (CuI:S) thin film using a liquid-iodination method with a thiol additive. The CuI:S film shows a remarkably high electrical conductivity of 511 S cm-1 with an optical transmittance of greater than 80%. Furthermore, additional hole doping of CuI:S with H2O2 treatment improves the electrical conductivity to 596 S cm-1. Consequently, CuI:S exhibits a record-high figure of merit (FOM) value of 63,000 M C2-1 (73,000 M C2-1 with H2O2 treatment), which is similar to 370% (similar to 430% with H2O2 treatment) higher than the previously reported record high FOM value. The highly conducting CuI:S electrode is successfully applied as transparent conducting electrodes of the organic light-emitting diode and transparent p-type thin-film transistor. The liquid-iodination chemical method with unconventional control of the reaction parameters can be generalized to produce high-quality metal halide thin films, allowing them to be applicable for transparent electronics and optoelectronics.
引用
收藏
页码:10517 / 10527
页数:11
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